ALD (Oxide/Nitride)
BRUTE Hydrazine for Low Temperature Metal-Nitride ALD: Low Resistivity and Oxygen-Free Films Enabled by Ultra-High Purity
Author(s): Daniel Alvarez and Jeffrey Spiegelman
DFT Molecular Dynamics Simulations and Experimental Measurements of a-HfO2/a-SiO/SiGe(001) and a-HfO2/a-SiO2/SiGe(001) Interfaces
Author(s): E. Chagarov, K. Sardashti, I. Kwak, S. Ueda, Andrew C. Kummel, M. Yakimov, S. Oktyabrsky, N. Yoshida, L. Dong. N. Kim, S. Nemani, Daniel Alvarez, Jeffrey Spiegelman
Anhydrous H2O2 for ALD HfO2 growth and interfacial layer thickness control
Author(s): S. Consiglio, R. D. Clark, T. Hakamata, K. Tapily. C. S. Wajda, and G. J. Leusink
Hydrogen Peroxide Gas Delivery for Atomic Layer Deposition, Annealing, and Surface Cleaning in Semiconductor Processing
Author(s): Jeffrey Spiegelman, Russ Holmes and Zohreh Shamsi
Products
Brute Peroxide, Peroxidizer
Applications
ALD (Oxide/Nitride), Surface Clean / Modification
Anhydrous Hydrogen Peroxide Gas Delivery for Atomic Layer Deposition
Author(s): Daniel Alvarez, Jr., Jeffrey Spiegelman
ALD of Al2O3 using H2O2 Vapor
Author(s): Adam Hinckley, Pablo Mancheno, and Anthony Muscat
Cheating Raoult’s Law to Enable Delivery of Hydrogen Peroxide as a Stable Vapor
Author(s): Daniel Alvarez and Jeffrey Spiegelman
Products
Brute Peroxide, Peroxidizer
Applications
ALD (Oxide/Nitride), Surface Clean / Modification
Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing
Author(s): Tobin Kaufman-Osborn, Evgueni A. Chagarov, SangWook Park, Bhagawan Sahuc, Shariq Siddiqui, Andrew C. Kummel
Passivation and Functionalization of SiGe(001) and (110) via HOOH(g) Dosing for ALD Nucleation
Author(s): Sang Wook Park, Tobin Kaufman-Osborn, Hyonwoong Kim, Evgueni Chagarov, Bhagawan Sahu, Andrew C. Kummel
Comparison of hydrogen peroxide and ozone for use in zirconium oxide atomic layer deposition
Author(s): Daniel Alvarez, Jeffrey Spiegelman
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