Reducing Agent & Nitride Source
Low Temperature, High Aspect Ratio
Hydrazine is an excellent low temperature thermal ALD nitride source as well as an excellent reducing agent. Next generation devices have low thermal budgets and high aspect ratio structures that create new challenges for conformal nitride films. Traditional solutions cannot meet these new challenges. Thermal ammonia does not yield quality nitride films below 400°C. Plasma does not deliver the step coverage and conformality needed for high aspect ratio structures and causes surface damage.
Advantages of Hydrazine Gas
- Highly reactive, enabling thermal ALD at much less than 400°C
- No line of sight required, providing uniform films on high aspect ratio structures
- No oxygen or carbon, eliminating contamination
- Fewer device defects
- Better electrical performance
- Strong reducing agent for surface conditioning/cleaning of various metals
BRUTE Hydrazine ampoules from left to right: OEM 5-Valve Vessel, 1,000g Vaporizer, 250g Vaporizer, and 100g Vaporizer
What is the Nitride Hub?
The Nitride Hub is a RASIRC-run program that provides a secure, collaborative environment for precursor manufacturers, OEMs, and end users to rapidly screen and evaluate metal nitride precursors with BRUTE Hydrazine. OEMs and end users can evaluate BRUTE Hydrazine performance in an IP-secure environment before introducing it into their own facilities, while protecting proprietary IP.
Our experienced PhD process engineers work directly with partners to design and execute a customized DOE based on the desired thin film and success criteria defined by you. Weekly data reviews provide ongoing insight into DOE progress, enabling rapid iteration, data-driven decisions, and clear direction for the next phase of development.
The Nitride Hub Enables:
- IP Security: Partner retains ownership of developed IP.
- EHS Fast Track: Pre-approval for Hydrazine and most Metal Nitride precursor classes.
- Novel Precursor Screening: ALD tooling for screening partner precursors with Hydrazine and NH₃ reactants.
- ALD Expertise: PhD process engineers run all testing and metrology.
Nitride Hub Facilities
- Kurt J. Lesker ALD-1150LX System: Enables fab-level film development and process optimization, featuring a high-vacuum load lock and process temperatures up to 600°C.
- Qualcomm Institute at UCSD: RASIRC is expanding the Nitride Hub to UCSD’s Qualcomm Institute, home to the Nano3 fabrication facility. This expansion will increase throughput and improve film quality through access to fab-level ALD research equipment.
- UT Dallas Semiconductor Innovation Center: Provides access to a Korean Vacuum Tech 6-inch ALD tool featuring a load lock, wider temperature range, and lower base pressure. This industry-friendly, IP-safe mini-fab also offers advanced metrology capabilities, including XPS, ellipsometry, SEM/TEM, XRR, I-V/C-V, and AFM.