BRUTE Hydrazine
Effect of Vapor-phase Cleaning Using Anhydrous N2H4 on Cu and Co for Area-Selective Atomic Layer Deposition
Author(s): Jin-Hyun Kim,a,b Sang Woo Kim, Su Min Hwang, Harrison Sejoon Kim, Yong Chan Jung, Luis Fabißn Pe±a, Kui Tan, Jean-Francois Veyan, Rino Choi, Daniel Alvarez, Jeff Spiegelman, and Jiyoung Kim
Products
BRUTE Hydrazine
Applications
Area Selective Atomic Layer Deposition (ASD), Surface Clean / Modification
Investigation of Low Temperature Silicon Nitride Deposition using Hexachlorodisilane and Ultra-High Purity Hydrazine
Author(s): Antonio T. Lucero, Aswin Kondusamy, Su Min Hwang, Xin Meng, Harrison S. Kim, Dan Alvarez Jr., Jeff Spiegelman, and Jiyoung Kim
Low Temperature Crystalline AlN ALD with Hydrazine
Author(s): Professor Andrew C. Kummel (UCSD)
ALD TiN Evaluation Using BRUTE Hydrazine
Author(s): Electronics Technology Dept., Tsukuba Laboratories, Research & Development Div., RASIRC and Taiyo Nippon Sanso
Rasirc Brute Hydrazine versus Ammonia for III-V Nitride Deposition
Author(s): Daniel Alvarez, PhD
Low Resistance ALD TiNx from Low Temperature Thermal TiCl4 + Anhydrous N2H4
Author(s): Steven Wolf, M. Kavrik, S. Ueda, M. Breeden1 J. Park, R. Holmes, Daniel Alvarez, Jeffrey Spiegelman, and Andrew C. Kummel
Low temperature ALD of SiNx in trench structure: Comparing hollow cathode plasma-enhanced ALD and thermal ALD with hydrazine
Author(s): Aswin L.N. Kondusamy, Su Min Hwang, Zhiyang Qin, Antonio T. Lucero, Xin Meng, Harrison S. Kim, Jaebeom Lee, Dan Alvarez Jr., Jeff Spiegelman, Jiyoung Kim
Low temperature Aluminium Nitride Deposition: Comparing Hydrazine and Ammonia
Author(s): Aswin L.N. Kondusamy, Su Min Hwang, Zhiyang Qin, Antonio T. Lucero, Xin Meng, Dan Alvarez Jr., Jeff Spiegelman, Jiyoung Kim
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