Request a Whitepaper Request a Whitepaper Name(required) Email(required) Company(required) Title(required) State/Province/Country Phone Whitepaper Requested(required) Advantages of Hydrogen Peroxide in Spacer and Hard Mask ALD AF2-MoP16 ALD HfO2 with Anhydrous H2O2 in a 300 mm Cross-flow Reactor – Comparison with H2O and O3 Oxidants ALD of Al2O3 using H2O2 Vapor ALD TiN Evaluation Using BRUTE Hydrazine Anhydrous H2O2 for ALD HfO2 growth and interfacial layer thickness control Anhydrous Hydrogen Peroxide Gas Delivery for Atomic Layer Deposition AS-TuP4 Investigation of In-situ Surface Cleaning of Cu Films using O3/O2 and N2H4 Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing BRUTE Hydrazine for Low Temperature Metal-Nitride ALD: Low Resistivity and Oxygen-Free Films Enabled by Ultra-High Purity Cheating Raoult’s Law to Enable Delivery of Hydrogen Peroxide as a Stable Vapor Cleaning and passivation of Copper Surface using acetic acid, hydrazine and self-assembled monolayers Comparative Study of Titanium Nitride ALD using High Purity Hydrazine vs Ammonia Comparison of hydrogen peroxide and ozone for use in zirconium oxide atomic layer deposition Control and Optimization of Thermal Oxidation Processes for Industrial Solar Cell Fabrication Decomposition of Hydrogen Peroxide in the Gas Phase Deposition of High Thermal Conductivity AlN Heat Spreader Films DFT Molecular Dynamics Simulations and Experimental Measurements of a-HfO2/a-SiO/SiGe(001) and a-HfO2/a-SiO2/SiGe(001) Interfaces Effect of Vapor-phase Cleaning Using Anhydrous N2H4 on Cu and Co for Area-Selective Atomic Layer Deposition Hydrogen Peroxide Gas Delivery for Atomic Layer Deposition, Annealing, and Surface Cleaning in Semiconductor Processing Investigation of Low Temperature Silicon Nitride Deposition using Hexachlorodisilane and Ultra-High Purity Hydrazine Low Resistance ALD TiNx from Low Temperature Thermal TiCl4 + Anhydrous N2H4 Low temperature ALD of SiNx in trench structure: Comparing hollow cathode plasma-enhanced ALD and thermal ALD with hydrazine Low Temperature ALD of SiNx using Si2Cl6 and ultra high-purity Hydrazine Low temperature Aluminium Nitride Deposition: Comparing Hydrazine and Ammonia Low Temperature Atomic Layer Deposition of Silicon Nitride using Hexachlorodisilane and Ultra-High Purity Hydrazine Low Temperature Crystalline AlN ALD with Hydrazine Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110) Low Temperature Thermal ALD TiNx and TaNx Films from Anhydrous N2H4 Low temperature thermal SiNx ALD process using N2H4 Low-T Thermal ALD BN from N2H4 + BCI3 on SI0.7Ge0.3(001), HPOG, and Cu Nafion-based Drying Apparatuses for Humidity Removal from Sample Gas Prior to GC/MS Analysis Oxidant Comparison Particle Generation by Incomplete Vaporization of Condensable Fluids and Particle Prevention by Membrane Pervaporation Passivation and Functionalization of SiGe(001) and (110) via HOOH(g) Dosing for ALD Nucleation Process Variables Affecting Silicon Oxide Films Related to Wet Thermal Oxidation RainMaker Humidification System for Precise Delivery of Water Vapor into Atmospheric and Vacuum Application RASIRC BRUTE Hydrazine versus Ammonia for III-V Nitride Deposition Sacrificial hardmask ALD with hydrogen peroxide: comparative study of low temperature growth and film characteristics for TiO2 and Al2O Self-limiting CVD of a passivating SiOx control layer on InGaAs(001)-(2×4) with the prevention of III-V oxidation Thermal Oxidation as a Key Technology for High Efficiency Screen Printed Industrial Silicon Solar Cells Vapor-phase Surface Cleaning of Electroplated Cu Films Using Anhydrous N2H4 ALD Nitride Wizard – White Paper Message Send Email Δ