Events - RASIRC

RASIRC

RASIRC Event Participation

Recent and Upcoming Events

IITC Conference 2024

14.2
Atomic Layer Deposition of TiN in Horizontal Vias Using Hydrazine as Nitrogen Precursor (Student Paper)
Jannick Fammels, Ping Che Lee, Dipayan Pal, Julian Pilz, Dmytro Solonenko, Jeffrey Spiegelman, Andrew Kummel – University of California, San Diego; Silicon Austria Labs, RASIRC

26
With decreasing feature size and changes in 3D DRAM and NAND architecture, TiN diffusion barriers for Cu and W metallization must become thinner and extremely conformal in horizontal structures. Titanium tetrachloride (TiCl4) and anhydrous hydrazine (N2H4) are promising precursors for low resistivity TiN atomic layer deposition (ALD). In this work these precursors were investigated for developing a particle free TiN ALD process with extremely high conformality in horizontal vias.

June 3-6, 2024 – San Jose, CA

IITC Conference 2024

P9. Selective Co ALD for Chiplet-to-Wafer and Wafer-to-Wafer Bonding (Student Paper)
Cheng Hsuan Kuo, Madison Manley, Dipayan Pal, Rohan Sahay, Ravi Kanjolia, Mansour Moinpour, Jacob Woodruff, Jeffrey Spiegelman, Muhannad Bakir, Andrew Kummel – UCSD, Georgia Institute of Technology, EMD Electronics, RASIRC

Cyclic clean treatment by using strong oxidant: HOOH and reductant: N2H4 ¬was developed for Cu cleaning which can be applied in the inverse hybrid metal bonding process. Compared to UHV anneal at higher temperature (415C), cyclic clean process is only performed at 340C with lower surface impurities. Also, highly selective Co ALD is deposited on metal Cu but not on SiO2 even after 1000 ALD cycles.

June 3-6, 2024 – San Jose, CA