Low Temperature Crystalline AlN ALD with Hydrazine

Professor Andrew C. Kummel (UCSD)

Advantages of Hydrogen Peroxide in Spacer and Hard Mask ALD

Daniel Alvarez, PhD

Hydrogen Peroxide Gas Delivery for Atomic Layer Deposition, Annealing, and Surface Cleaning in Semiconductor Processing

Jeffrey Spiegelman, Russ Holmes and Zohreh Shamsi

Anhydrous Hydrogen Peroxide Gas Delivery for Atomic Layer Deposition

Daniel Alvarez, Jr., Jeffrey Spiegelman

Low temperature Aluminium Nitride Deposition: Comparing Hydrazine and Ammonia

Aswin L.N. Kondusamy, Su Min Hwang, Zhiyang Qin, Antonio T. Lucero, Xin Meng, Dan Alvarez Jr., Jeff Spiegelman, Jiyoung Kim

Particle Generation by Incomplete Vaporization of Condensable Fluids and Particle Prevention by Membrane Pervaporation

Jeffrey Spiegelman, Daniel Alvarez, Russ Holmes

Process Variables Affecting Silicon Oxide Films Related to Wet Thermal Oxidation

Jeffrey Spiegelman

Thermal Oxidation as a Key Technology for High Efficiency Screen Printed Industrial Silicon Solar Cells

Daniel Biro, Sebastian Mack, Andreas Wolf, Anke Lemke, Udo Belledin, Denis Erath, Benedikt Holzinger, Edgar Allan Wotke, Marc Hofmann, Luca Gautero, Jochen Rentsch, Ralf Preu

Low temperature thermal SiNx ALD process using N2H4

Jae Chan Park, Dae Hyun Kim, Tae Jun Seok, Dae Woong Kim, Woo-Hee Kim and Tae Joo Park

Low-T Thermal ALD BN from N2H4 + BCI3 on SI0.7Ge0.3(001), HPOG, and Cu

Steven Wolf, M. Breeden, M. Edmonds, K

AS-TuP4 Investigation of In-situ Surface Cleaning of Cu Films using O3/O2 and N2H4

Su Min Hwang, A.L.N. Kondusamy, Q. Zhiyang, H.S. Kim, L.F. Pe±a, K. Tan, J. Veyan, Daniel Alvarez, Jeffrey Spiegelman, Jiyoung Kim

Investigation of Low Temperature Silicon Nitride Deposition using Hexachlorodisilane and Ultra-High Purity Hydrazine

Antonio T. Lucero, Aswin Kondusamy, Su Min Hwang, Xin Meng, Harrison S. Kim, Dan Alvarez Jr., Jeff Spiegelman, and Jiyoung Kim

Low Temperature Thermal ALD TiNx and TaNx Films from Anhydrous N2H4

Steven Wolf, Michael Breeden, Mahmut Kavrik, Jun Hong Park, Russell Holmes, Daniel Alvarez, Jeffrey Spiegelman, and Andrew C. Kummel

Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110)

Mary Edmonds, Kasra Sardashti, Steven Wolf, Evgueni Chagarov, Max Clemons, Tyler Kent, Jun Hong Park, Kechao Tang, Paul C. McIntyre, Naomi Yoshida, Lin Dong, Russell Holmes, Daniel Alvarez, and Andrew C. Kummel

DFT Molecular Dynamics Simulations and Experimental Measurements of a-HfO2/a-SiO/SiGe(001) and a-HfO2/a-SiO2/SiGe(001) Interfaces

E. Chagarov, K. Sardashti, I. Kwak, S. Ueda, Andrew C. Kummel, M. Yakimov, S. Oktyabrsky, N. Yoshida, L. Dong. N. Kim, S. Nemani, Daniel Alvarez, Jeffrey Spiegelman

Comparison of hydrogen peroxide and ozone for use in zirconium oxide atomic layer deposition

Daniel Alvarez, Jeffrey Spiegelman

Self-limiting CVD of a passivating SiOx control layer on InGaAs(001)-(2×4) with the prevention of III-V oxidation

Mary Edmonds, Steven Wolf, Evgueni Chagarov, Tyler Kent, Jun Hong Park, Russell Holmes, Daniel Alvarez, Ravi Droopad, Andrew C. Kummel

Vapor-phase Surface Cleaning of Electroplated Cu Films Using Anhydrous N2H4

Su Min Hwang, Luis Fabißn Pe±a, Kui Tan, Harrison Sejoon Kim, Aswin L. N. Kondusamy, Zhiyang Qin, Yong Chan Jung, Jean-Francois Veyan, Daniel Alvarez, Jeff Spiegelman, and Jiyoung Kim

Cleaning and passivation of Copper Surface using acetic acid, hydrazine and self-assembled monolayers

Su Min Hwang, Harrison Sejoon Kim, Jin-Hyun Kim, Yong Chan Jung, Luis Fabißn Pe±a, Kui Tan, Jean-Francois Veyan, Daniel Alvarez, Jeff Spiegelman, Dennis M. Hausmann, Kashish Sharma, Paul Lemaire, and Jiyoung Kim

Low Resistance ALD TiNx from Low Temperature Thermal TiCl4 + Anhydrous N2H4

Steven Wolf, M. Kavrik, S. Ueda, M. Breeden1 J. Park, R. Holmes, Daniel Alvarez, Jeffrey Spiegelman, and Andrew C. Kummel

BRUTE Hydrazine for Low Temperature Metal-Nitride ALD: Low Resistivity and Oxygen-Free Films Enabled by Ultra-High Purity

Daniel Alvarez and Jeffrey Spiegelman

Decomposition of Hydrogen Peroxide in the Gas Phase

Jeff Spiegelman

Sacrificial hardmask ALD with hydrogen peroxide: comparative study of low temperature growth and film characteristics for TiO2 and Al2O

Dr. Daniel Alvarez, Keisuke Andachi, Gaku Tsuchibuchi, Katsumasa Suzuki, Jeff Spiegelman

Cheating Raoult’s Law to Enable Delivery of Hydrogen Peroxide as a Stable Vapor

Daniel Alvarez and Jeffrey Spiegelman

RainMaker Humidification System for Precise Delivery of Water Vapor into Atmospheric and Vacuum Application

Jeffrey Spiegelman

Control and Optimization of Thermal Oxidation Processes for Industrial Solar Cell Fabrication

Sebastian Mack, Anke Lemke, Andreas Wolf, Benedikt Holzinger, Martin Zimmer, Daniel Biro, Ralf Preu

ALD TiN Evaluation Using BRUTE Hydrazine

Electronics Technology Dept., Tsukuba Laboratories, Research & Development Div., RASIRC and Taiyo Nippon Sanso

AF2-MoP16 ALD HfO2 with Anhydrous H2O2 in a 300 mm Cross-flow Reactor û Comparison with H2O and O3 Oxidants

Steven Consiglio, R. Clark, C. Wajda, G. Leusink

Deposition of High Thermal Conductivity AlN Heat Spreader Films

Scott T. Ueda, Aaron McLeod, Michelle Chen, Chris Perez, Eric Pop, Dan Alvarez, Andrew C. Kummel

Low Temperature Atomic Layer Deposition of Silicon Nitride using Hexachlorodisilane and Ultra-High Purity Hydrazine

Aswin L. N. Kondusamy, Antonio T. Lucero, Su Min Hwang, Xin Meng, Harrison S. Kim, Dan Alvarez Jr., Jeff Spiegelman, and Jiyoung Kim

ALD of Al2O3 using H2O2 Vapor

Adam Hinckley, Pablo Mancheno, and Anthony Muscat

Passivation and Functionalization of SiGe(001) and (110) via HOOH(g) Dosing for ALD Nucleation

Sang Wook Park, Tobin Kaufman-Osborn, Hyonwoong Kim, Evgueni Chagarov, Bhagawan Sahu, Andrew C. Kummel

Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing

Tobin Kaufman-Osborn, Evgueni A. Chagarov, SangWook Park, Bhagawan Sahuc, Shariq Siddiqui, Andrew C. Kummel

Anhydrous H2O2 for ALD HfO2 growth and interfacial layer thickness control

S. Consiglio, R. D. Clark, T. Hakamata, K. Tapily. C. S. Wajda, and G. J. Leusink

Low temperature ALD of SiNx in trench structure: Comparing hollow cathode plasma-enhanced ALD and thermal ALD with hydrazine

Aswin L.N. Kondusamy, Su Min Hwang, Zhiyang Qin, Antonio T. Lucero, Xin Meng, Harrison S. Kim, Jaebeom Lee, Dan Alvarez Jr., Jeff Spiegelman, Jiyoung Kim

Low Temperature ALD of SiNx using Si2Cl6 and ultra high-purity Hydrazine

Aswin L.N. Kondusamy, Antonio T. Lucero, Su Min Hwang, Xin Meng, Harrison S. Kim, Jaebeom Lee, Dan Alvarez Jr., Jeff Spiegelman, Jiyoung Kim

Effect of Vapor-phase Cleaning Using Anhydrous N2H4 on Cu and Co for Area-Selective Atomic Layer Deposition

Jin-Hyun Kim,a,b Sang Woo Kim, Su Min Hwang, Harrison Sejoon Kim, Yong Chan Jung, Luis Fabißn Pe±a, Kui Tan, Jean-Francois Veyan, Rino Choi, Daniel Alvarez, Jeff Spiegelman, and Jiyoung Kim

Nafion-based Drying Apparatuses for Humidity Removal from Sample Gas Prior to GC/MS Analysis

Christopher Rosemeyer, Russel J. Holmes, Daniel Alvarez, Jr., Jeffrey Spiegelman