TiN

Atomic Layer Deposition of TiN in Horizontal Vias Using Hydrazine as Nitrogen Precursor

ALD TiN Evaluation Using BRUTE Hydrazine

Author(s): Electronics Technology Dept., Tsukuba Laboratories, Research & Development Div., RASIRC and Taiyo Nippon Sanso

Low Resistance ALD TiNx from Low Temperature Thermal TiCl4 + Anhydrous N2H4

Author(s): Steven Wolf, M. Kavrik, S. Ueda, M. Breeden1 J. Park, R. Holmes, Daniel Alvarez, Jeffrey Spiegelman, and Andrew C. Kummel