Si3N4
Investigation of Low Temperature Silicon Nitride Deposition using Hexachlorodisilane and Ultra-High Purity Hydrazine
Author(s): Antonio T. Lucero, Aswin Kondusamy, Su Min Hwang, Xin Meng, Harrison S. Kim, Dan Alvarez Jr., Jeff Spiegelman, and Jiyoung Kim
Low temperature ALD of SiNx in trench structure: Comparing hollow cathode plasma-enhanced ALD and thermal ALD with hydrazine
Author(s): Aswin L.N. Kondusamy, Su Min Hwang, Zhiyang Qin, Antonio T. Lucero, Xin Meng, Harrison S. Kim, Jaebeom Lee, Dan Alvarez Jr., Jeff Spiegelman, Jiyoung Kim
Low Temperature ALD of SiNx using Si2Cl6 and ultra high-purity Hydrazine
Author(s): Aswin L.N. Kondusamy, Antonio T. Lucero, Su Min Hwang, Xin Meng, Harrison S. Kim, Jaebeom Lee, Dan Alvarez Jr., Jeff Spiegelman, Jiyoung Kim
Low Temperature Atomic Layer Deposition of Silicon Nitride using Hexachlorodisilane and Ultra-High Purity Hydrazine
Author(s): Aswin L. N. Kondusamy, Antonio T. Lucero, Su Min Hwang, Xin Meng, Harrison S. Kim, Dan Alvarez Jr., Jeff Spiegelman, and Jiyoung Kim
Low temperature thermal SiNx ALD process using N2H4
Author(s): Jae Chan Park, Dae Hyun Kim, Tae Jun Seok, Dae Woong Kim, Woo-Hee Kim and Tae Joo Park
Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110)
Author(s): Mary Edmonds, Kasra Sardashti, Steven Wolf, Evgueni Chagarov, Max Clemons, Tyler Kent, Jun Hong Park, Kechao Tang, Paul C. McIntyre, Naomi Yoshida, Lin Dong, Russell Holmes, Daniel Alvarez, and Andrew C. Kummel