HfO2

In-situ FTIR Study of Oxygen source mixing for Hafnium Oxide Atomic Layer Deposition on Titanium Nitride

AF2-MoP16 ALD HfO2 with Anhydrous H2O2 in a 300 mm Cross-flow Reactor – Comparison with H2O and O3 Oxidants

Author(s): Steven Consiglio, R. Clark, C. Wajda, G. Leusink

DFT Molecular Dynamics Simulations and Experimental Measurements of a-HfO2/a-SiO/SiGe(001) and a-HfO2/a-SiO2/SiGe(001) Interfaces

Author(s): E. Chagarov, K. Sardashti, I. Kwak, S. Ueda, Andrew C. Kummel, M. Yakimov, S. Oktyabrsky, N. Yoshida, L. Dong. N. Kim, S. Nemani, Daniel Alvarez, Jeffrey Spiegelman

Anhydrous H2O2 for ALD HfO2 growth and interfacial layer thickness control

Author(s): S. Consiglio, R. D. Clark, T. Hakamata, K. Tapily. C. S. Wajda, and G. J. Leusink