Improved Surface Functionalization with H₂O₂
RASIRC® has released new research on advanced surface functionalization using high-purity hydrogen peroxide (H₂O₂) delivered via BRUTE® Peroxide and Peroxidizer™ […]
RASIRC® has released new research on advanced surface functionalization using high-purity hydrogen peroxide (H₂O₂) delivered via BRUTE® Peroxide and Peroxidizer™ […]
After two decades of visionary leadership, Jeff Spiegelman, Founder and CEO of RASIRC, is announcing his retirement. His dedication and
RASIRC®, in collaboration with the Kummel Lab at UC San Diego, has released groundbreaking research on low-temperature thermal TiN deposition
RASIRC, in collaboration with UT Dallas, presents groundbreaking research on engineering metal/high-k oxide interfaces for next-generation DRAM applications. This white
RASIRC is proud to share the recent discoveries to come out of the Nitride Hub. Through the use of BRUTE®
RASIRC has been granted a new patent for the removal of ashable hard masks via a hydrogen peroxide plasma etch
RASIRC introduces the Nitride Hub, a dedicated facility for rapid screening of metal nitride precursors in semiconductor manufacturing. This new
RASIRC has partnered with Taiyo Nippon Sanso Corporation (TNSC) to bring BRUTE Peroxide to the Japanese market. This canister-based hydrogen
San Diego, Calif – January 8, 2025 – RASIRC announced new sponsored research from UCSD published in Journal of Vacuum
San Diego, California – December 11th to 14th, 2024 – Leading experts in semiconductor interfaces gathered at the Catamaran Hotel