Brute® Peroxide enables Si doping of HZO and ZrO2 thin films eliminating electric field hysteresis while preserving high-k
San Diego, Calif – January 8, 2025 – RASIRC announced new sponsored research from UCSD published in Journal of Vacuum […]
San Diego, Calif – January 8, 2025 – RASIRC announced new sponsored research from UCSD published in Journal of Vacuum […]
San Diego, California – December 11th to 14th, 2024 – Leading experts in semiconductor interfaces gathered at the Catamaran Hotel
RASIRC is proud to announce that its research partners from the University of California San Diego (UCSD) and the University
RASIRC is pleased to announce that the paper titled “In-situ FTIR Study of Oxygen Source Mixing for Hafnium Oxide Atomic
Bellevue, Washington – July 23rd to 26th, 2023 – Leading experts in the field of atomic layer deposition (ALD) are gathering
RASIRC announced new UCSD research shows that TiN film grown by low temperature ALD can yield resistivity below 220 uΩ-cm
RASIRC in collaboration with University of California, San Diego (UCSD) will publish data that hydrogen peroxide (H2O2) gas is a
RASIRC announced results from a recent study that shows a stable plasma can be made with hydrogen peroxide gas, enabling
RASIRC announced that it will be presenting “Hydrogen Peroxide Gas: From R&D to HVM” at the 7th Annual CMC Conference. The
A recent study by RASIRC shows that H2O2 doping during hydrogen plasma exposure substantially protected oxide layers while metal or organic