Improved Surface Functionalization with H₂O₂
RASIRC® has released new research on advanced surface functionalization using high-purity hydrogen peroxide (H₂O₂) delivered via BRUTE® Peroxide and Peroxidizer™ […]
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RASIRC Announces CEO Transition: Jeff Spiegelman Retires, Marshall Benham Appointed as New CEO
After two decades of visionary leadership, Jeff Spiegelman, Founder and CEO of RASIRC, is announcing his retirement. His dedication and
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Enabling Low-Resistivity, Halogen-Free TiN Films in Advanced Nodes with BRUTE® Hydrazine
RASIRC®, in collaboration with the Kummel Lab at UC San Diego, has released groundbreaking research on low-temperature thermal TiN deposition
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Advanced Approach in Engineering the Interface of Metal/High-k Oxide Stacks for Next-Generation DRAM Applications
RASIRC, in collaboration with UT Dallas, presents groundbreaking research on engineering metal/high-k oxide interfaces for next-generation DRAM applications. This white
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BRUTE® Hydrazine Enables High Purity SiN Thermal ALD Below 400°C at the Nitride Hub
RASIRC is proud to share the recent discoveries to come out of the Nitride Hub. Through the use of BRUTE®
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RASIRC Granted New Patent for Removal of Ashable Hard Mask via a Hydrogen Peroxide Plasma Etch Process
RASIRC has been granted a new patent for the removal of ashable hard masks via a hydrogen peroxide plasma etch
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RASIRC Launches Nitride Hub for Metal Nitride Film Development
RASIRC introduces the Nitride Hub, a dedicated facility for rapid screening of metal nitride precursors in semiconductor manufacturing. This new
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RASIRC Expands BRUTE® Peroxide to Japan
RASIRC has partnered with Taiyo Nippon Sanso Corporation (TNSC) to bring BRUTE Peroxide to the Japanese market. This canister-based hydrogen