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Sacrificial hardmask ALD with hydrogen peroxide: comparative study of low temperature growth and film characteristics for TiO2 and Al2O
Author(s): Dr. Daniel Alvarez, Keisuke Andachi, Gaku Tsuchibuchi, Katsumasa Suzuki, Jeff Spiegelman
Low Resistance ALD TiNx from Low Temperature Thermal TiCl4 + Anhydrous N2H4
Author(s): Steven Wolf, M. Kavrik, S. Ueda, M. Breeden1 J. Park, R. Holmes, Daniel Alvarez, Jeffrey Spiegelman, and Andrew C. Kummel
Low temperature ALD of SiNx in trench structure: Comparing hollow cathode plasma-enhanced ALD and thermal ALD with hydrazine
Author(s): Aswin L.N. Kondusamy, Su Min Hwang, Zhiyang Qin, Antonio T. Lucero, Xin Meng, Harrison S. Kim, Jaebeom Lee, Dan Alvarez Jr., Jeff Spiegelman, Jiyoung Kim
Low temperature Aluminium Nitride Deposition: Comparing Hydrazine and Ammonia
Author(s): Aswin L.N. Kondusamy, Su Min Hwang, Zhiyang Qin, Antonio T. Lucero, Xin Meng, Dan Alvarez Jr., Jeff Spiegelman, Jiyoung Kim
AS-TuP4 Investigation of In-situ Surface Cleaning of Cu Films using O3/O2 and N2H4
Author(s): Su Min Hwang, A.L.N. Kondusamy, Q. Zhiyang, H.S. Kim, L.F. Pe±a, K. Tan, J. Veyan, Daniel Alvarez, Jeffrey Spiegelman, Jiyoung Kim
Vapor-phase Surface Cleaning of Electroplated Cu Films Using Anhydrous N2H4
Author(s): Su Min Hwang, Luis Fabißn Pe±a, Kui Tan, Harrison Sejoon Kim, Aswin L. N. Kondusamy, Zhiyang Qin, Yong Chan Jung, Jean-Francois Veyan, Daniel Alvarez, Jeff Spiegelman, and Jiyoung Kim
AF2-MoP16 ALD HfO2 with Anhydrous H2O2 in a 300 mm Cross-flow Reactor – Comparison with H2O and O3 Oxidants
Author(s): Steven Consiglio, R. Clark, C. Wajda, G. Leusink
Decomposition of Hydrogen Peroxide in the Gas Phase
Author(s): Jeff Spiegelman
Products
Brute Peroxide, Peroxidizer
Low Temperature ALD of SiNx using Si2Cl6 and ultra high-purity Hydrazine
Author(s): Aswin L.N. Kondusamy, Antonio T. Lucero, Su Min Hwang, Xin Meng, Harrison S. Kim, Jaebeom Lee, Dan Alvarez Jr., Jeff Spiegelman, Jiyoung Kim
Low Temperature Atomic Layer Deposition of Silicon Nitride using Hexachlorodisilane and Ultra-High Purity Hydrazine
Author(s): Aswin L. N. Kondusamy, Antonio T. Lucero, Su Min Hwang, Xin Meng, Harrison S. Kim, Dan Alvarez Jr., Jeff Spiegelman, and Jiyoung Kim
Low-T Thermal ALD BN from N2H4 + BCI3 on SI0.7Ge0.3(001), HPOG, and Cu
Author(s): Steven Wolf, M. Breeden, M. Edmonds, K
Low temperature thermal SiNx ALD process using N2H4
Author(s): Jae Chan Park, Dae Hyun Kim, Tae Jun Seok, Dae Woong Kim, Woo-Hee Kim and Tae Joo Park
Low Temperature Thermal ALD TiNx and TaNx Films from Anhydrous N2H4
Author(s): Steven Wolf, Michael Breeden, Mahmut Kavrik, Jun Hong Park, Russell Holmes, Daniel Alvarez, Jeffrey Spiegelman, and Andrew C. Kummel
Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110)
Author(s): Mary Edmonds, Kasra Sardashti, Steven Wolf, Evgueni Chagarov, Max Clemons, Tyler Kent, Jun Hong Park, Kechao Tang, Paul C. McIntyre, Naomi Yoshida, Lin Dong, Russell Holmes, Daniel Alvarez, and Andrew C. Kummel
BRUTE Hydrazine for Low Temperature Metal-Nitride ALD: Low Resistivity and Oxygen-Free Films Enabled by Ultra-High Purity
Author(s): Daniel Alvarez and Jeffrey Spiegelman
DFT Molecular Dynamics Simulations and Experimental Measurements of a-HfO2/a-SiO/SiGe(001) and a-HfO2/a-SiO2/SiGe(001) Interfaces
Author(s): E. Chagarov, K. Sardashti, I. Kwak, S. Ueda, Andrew C. Kummel, M. Yakimov, S. Oktyabrsky, N. Yoshida, L. Dong. N. Kim, S. Nemani, Daniel Alvarez, Jeffrey Spiegelman
Particle Generation by Incomplete Vaporization of Condensable Fluids and Particle Prevention by Membrane Pervaporation
Author(s): Jeffrey Spiegelman, Daniel Alvarez, Russ Holmes
Anhydrous H2O2 for ALD HfO2 growth and interfacial layer thickness control
Author(s): S. Consiglio, R. D. Clark, T. Hakamata, K. Tapily. C. S. Wajda, and G. J. Leusink
Hydrogen Peroxide Gas Delivery for Atomic Layer Deposition, Annealing, and Surface Cleaning in Semiconductor Processing
Author(s): Jeffrey Spiegelman, Russ Holmes and Zohreh Shamsi
Products
Brute Peroxide, Peroxidizer
Applications
ALD (Oxide/Nitride), Surface Clean / Modification
Anhydrous Hydrogen Peroxide Gas Delivery for Atomic Layer Deposition
Author(s): Daniel Alvarez, Jr., Jeffrey Spiegelman
ALD of Al2O3 using H2O2 Vapor
Author(s): Adam Hinckley, Pablo Mancheno, and Anthony Muscat
Cheating Raoult’s Law to Enable Delivery of Hydrogen Peroxide as a Stable Vapor
Author(s): Daniel Alvarez and Jeffrey Spiegelman
Products
Brute Peroxide, Peroxidizer
Applications
ALD (Oxide/Nitride), Surface Clean / Modification
Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing
Author(s): Tobin Kaufman-Osborn, Evgueni A. Chagarov, SangWook Park, Bhagawan Sahuc, Shariq Siddiqui, Andrew C. Kummel
Passivation and Functionalization of SiGe(001) and (110) via HOOH(g) Dosing for ALD Nucleation
Author(s): Sang Wook Park, Tobin Kaufman-Osborn, Hyonwoong Kim, Evgueni Chagarov, Bhagawan Sahu, Andrew C. Kummel
Nafion-based Drying Apparatuses for Humidity Removal from Sample Gas Prior to GC/MS Analysis
Author(s): Christopher Rosemeyer, Russel J. Holmes, Daniel Alvarez, Jr., Jeffrey Spiegelman
Comparison of hydrogen peroxide and ozone for use in zirconium oxide atomic layer deposition
Author(s): Daniel Alvarez, Jeffrey Spiegelman
Thermal Oxidation as a Key Technology for High Efficiency Screen Printed Industrial Silicon Solar Cells
Author(s): Daniel Biro, Sebastian Mack, Andreas Wolf, Anke Lemke, Udo Belledin, Denis Erath, Benedikt Holzinger, Edgar Allan Wotke, Marc Hofmann, Luca Gautero, Jochen Rentsch, Ralf Preu
Applications
Thermal Oxidation
Process Variables Affecting Silicon Oxide Films Related to Wet Thermal Oxidation
Author(s): Jeffrey Spiegelman
Applications
Thermal Oxidation
Films
SiO2