Atomic Layer Deposition of TiN in Horizontal Vias Using Hydrazine as Nitrogen Precursor

Presented at:

IITC Interconnect 2024 (San Jose)

Back to all Resources

June 2024

In this work by the Kummel Lab at UCSD nanometer scale conformal coatings of TiN and GaN were grown on SiO2 horizontal via test structures with Brute® Hydrazine (N2H4). The fabricated films were free of particles and pinholes with <0.1nm surface roughness. TEM-EDX analysis shows highly conformal coatings down to 4.5nm, making this technology attractive for 3D DRAM and NAND applications as dimensions are downscaled. Resistivity measurements show 119 µΩ cm films at 15 nm thickness when deposited at 500 °C.

Chart showing TEM-EDX of GaN/TiN deposited conformally on SiO2 horizontal vias
TEM-EDX of GaN/TiN deposited conformally on SiO2 horizontal vias
Graphic showing zoomed out SiO2 horizontal via structure
Zoomed out SiO2 horizontal via structure.
Graph showing TiN resistivity vs. film thickness and deposition temperature
TiN resistivity vs. film thickness and deposition temperature.

Get the full research report

Enter your email to request the full PDF of this report.

This field is for validation purposes and should be left unchanged.

Products:

Applications:

Films: