An IITC paper authored by researchers from UCSD, Samsung, and RASIRC demonstrated record low resistivities for low temperature titanium nitride (TiN) films grown by thermal ALD process. Films yielded resistivities below 200 µohm-cm.
An IITC paper authored by researchers from UCSD, Samsung, and RASIRC demonstrated record low resistivities for low temperature titanium nitride (TiN) films grown by thermal ALD process. Films yielded resistivities below 200 µohm-cm.