News

Grow Low Temperature Nitrides by Atomic Layer Deposition Without Plasma

December 14, 2016

Unique Hydrazine formulation and package enables HAR and 3D film studies for Laboratories. Read the full article here.

RASIRC BRUTE peroxide and hydrazine technology for leading edge memory and high performance logic

September 26, 2016

Hydrogen peroxide (H2O2) gas is an oxidant that improves passivation and nucleation density at semiconductor interfaces, potentially leading to reduced interfacial defect density. Read the full article here.

Hydrogen Peroxide Gas Delivery for ALD, Annealing, and Surface Cleaning in Semiconductor Processing

June 22, 2016

Hydrogen Peroxide Gas (HPG) is a powerful and versatile oxidant for processing new materials and 3D structures. HPG is now available in stable, high concentration and offers significant benefits to ALD, annealing and cleaning applications. Read the full article here.

Rocket Fuel may Propel Moore’s Law

April 6, 2016

Jonas Sundqvist, co-chair of the CMC 2016, while working with Fraunhofer (fraunhofer.de) showed that hydrazine and it’s derivatives provide unique advantages as a nitrogen source in thermal atomic-layer deposition (ALD). Read the full article here.

MATHESON Acquires Majority Share of RASIRC

August 28, 2012

RASIRC to continue developing products that purify and deliver ultra pure chemistries.