News

The presentation will discuss the importance of precursor gas flow measurement independent of carrier gas flow and will provide experimental performance data with hydrogen peroxide gas.

We are very happy to announce that have received a late news abstract from RASIRC out of San Diego, USA, for a presentation to be given at the EFDS Workshop “ALD for Industry” entitled “New ALD chemistries for low temperature oxide and nitride films”. RASIRC is also sponsoring the workshop and will have a stand the the exhibition. Read the full article here.

Unique Hydrazine formulation and package enables HAR and 3D film studies for Laboratories. Read the full article here.

Hydrogen peroxide (H2O2) gas is an oxidant that improves passivation and nucleation density at semiconductor interfaces, potentially leading to reduced interfacial defect density. Read the full article here.

Hydrogen Peroxide Gas (HPG) is a powerful and versatile oxidant for processing new materials and 3D structures. HPG is now available in stable, high concentration and offers significant benefits to ALD, annealing and cleaning applications. Read the full article here.

Jonas Sundqvist, co-chair of the CMC 2016, while working with Fraunhofer (fraunhofer.de) showed that hydrazine and it’s derivatives provide unique advantages as a nitrogen source in thermal atomic-layer deposition (ALD). Read the full article here.

RASIRC to continue developing products that purify and deliver ultra pure chemistries.