RASIRC Chief Technology Officer Dr. Daniel Alvarez, Jr. will present at the upcoming SPIE Advanced Lithography conference Advances in Patterning Materials and Processes XXXVII held in San Jose, California on February 23-27, 2020. The presentation “Sacrificial hardmask ALD with hydrogen peroxide: comparative study of low temperature growth and film characteristics for TiO2 and Al2O3,” is part of Session 7: Deposition-based Patterning scheduled February 26 at 9:00 AM in Grand Ballroom 220C of the San Jose Convention Center.
RASIRC will showcase a recent study focusing on precursor optimization using a novel hydrogen peroxide mass flow sensor at the AVS 66th International Symposium & Exhibition, to be held October 20 through October 25, 2019 in Columbus, Ohio. RASIRC will also be an exhibitor during the conference.
RASIRC will present a metal-oxide dielectric ALD comparative study that examines growth and film characteristics for H2O2/H2O mixtures, H2O and ozone at ECS Meeting held in Atlanta, Georgia October 13-17. The presentation will review common precursor chemistries and discuss collaborative research on oxidants, specifically hydrogen peroxide reactivity.
Inspired by hydrazine’s unique characteristics, University of Texas at Dallas and RASIRC have explored the feasibility of vapor-phase reduction of copper oxide using anhydrous N2H4 to achieve an ideal metallic Cu film in an ALD environment. Read the article here.