News

RASIRC Showcases Ultimate Oxidant and Nitride Precursors at Annual ALD Conference

July 22, 2019

RASIRC Utilizes Novel Safe Hydrazine Delivery System to Enable Low Temperature Group III Metal-Nitride Deposition

July 8, 2019

RASIRC Demonstrates Superior Titanium Dioxide Films by Use of Hydrogen Peroxide Gas

June 20, 2019

RASIRC Enables Low Temperature Group III Metal-Nitride Deposition

May 15, 2019

RASIRC Releases White Paper on Minimizing BRUTE® Peroxide Decomposition

April 23, 2019

RASIRC Presents Process Control ‘Ins and Outs’ for Optimized Mass Delivery

March 14, 2019

Effective Silicon and Metal Nitride Deposition at Reduced Temperature

November 15, 2018

RASIRC Presents New Oxidant Options for Low Temperature Dielectric ALD

October 18, 2018

RASIRC Presents Results of Silicon Nitride Deposition Study at AiMES Conference

September 30, 2018

RASIRC low temperature ALD of silicon and metal nitrides

July 27, 2018

RASIRC in collaboration with The University of Texas, Dallas has recently developed a low temperature thermal ALD process using the standard silicon precursor in CVD, HCDS and their new hydrazine formulation for a liquid source anhydrous hydrazine in a proprietary solvent. Read the full article here.