News

In Situ Cu Surface Cleaning with Anhydrous Hydrazine highlighted at AVS ALD 2019

July 23, 2019

Inspired by hydrazine’s unique characteristics, University of Texas at Dallas and RASIRC have explored the feasibility of vapor-phase reduction of copper oxide using anhydrous N2H4 to achieve an ideal metallic Cu film in an ALD environment. Read the article here.

RASIRC Showcases Ultimate Oxidant and Nitride Precursors at Annual ALD Conference

July 22, 2019

RASIRC Utilizes Novel Safe Hydrazine Delivery System to Enable Low Temperature Group III Metal-Nitride Deposition

July 8, 2019

RASIRC Demonstrates Superior Titanium Dioxide Films by Use of Hydrogen Peroxide Gas

June 20, 2019

RASIRC Enables Low Temperature Group III Metal-Nitride Deposition

May 15, 2019

RASIRC Releases White Paper on Minimizing BRUTE® Peroxide Decomposition

April 23, 2019

RASIRC Presents Process Control ‘Ins and Outs’ for Optimized Mass Delivery

March 14, 2019

Effective Silicon and Metal Nitride Deposition at Reduced Temperature

November 15, 2018

RASIRC Presents New Oxidant Options for Low Temperature Dielectric ALD

October 18, 2018

RASIRC Presents Results of Silicon Nitride Deposition Study at AiMES Conference

September 30, 2018