News
China has granted a patent related to the delivery of anhydrous hydrazine gas to process. This patent is part of family of patents around hydrazine, water, and hydrogen peroxide to enable safer and low temperature processing of next generation devices for microelectronic applications.
A novel method for generation of H2O2 gas enables more accurate and repeatable delivery of hydrogen peroxide gas into a wide range of flow rates, operating pressures, and temperatures.
RASIRC today published a survey of semiconductor and related applications that use hydrazine gas. The growing interest in hydrazine is driven by a need for new metals and metal nitride films that meet lower thermal budgets and shrinking 3-dimensional structures. A new formulation of hydrazine meets these requirements.
An IITC paper authored by researchers from UCSD, Samsung, and RASIRC demonstrated record low resistivities for low temperature titanium nitride (TiN) films grown by thermal ALD process. Films yielded resistivities below 200 µohm-cm.
Cheng-Hsuan Kuo and co-workers at UC San Diego in the Kummel research group, has recently concluded a study on TiN ALD utilizing the RASIRC BRUTE® Hydrazine (N2H4) vaporizer technology, which is presented this week at IEEE SISC December 16-18. Read the study here.
The Commissioner of the Intellectual Property Office, Ministry of Economic Affairs, Republic of China has granted patent I703087 for Method and Systems for Purifying Hydrogen Peroxide Solutions. The patent is applicable to all hydrogen peroxide products including BRUTE® Peroxide and The Peroxidizer®.
The Commissioner of the Intellectual Property Office, Ministry of Economic Affairs, Republic of China has granted patent I683923 for a method and device for delivery of process gas. RASIRC uses the patent in its products including BRUTE® Hydrazine and BRUTE Peroxide, which deliver reactive gases for micro-electronics applications and other critical processes. Process gas can be precisely and safely delivered by adjusting operating conditions such as temperature, pressure, and solution concentration.
RASIRC Chief Technology Officer Dr. Daniel Alvarez, Jr. will present at the upcoming SPIE Advanced Lithography conference Advances in Patterning Materials and Processes XXXVII held in San Jose, California on February 23-27, 2020. The presentation “Sacrificial hardmask ALD with hydrogen peroxide: comparative study of low temperature growth and film characteristics for TiO2 and Al2O3,” is part of Session 7: Deposition-based Patterning scheduled February 26 at 9:00 AM in Grand Ballroom 220C of the San Jose Convention Center.
RASIRC will showcase a recent study focusing on precursor optimization using a novel hydrogen peroxide mass flow sensor at the AVS 66th International Symposium & Exhibition, to be held October 20 through October 25, 2019 in Columbus, Ohio. RASIRC will also be an exhibitor during the conference.
RASIRC will present a metal-oxide dielectric ALD comparative study that examines growth and film characteristics for H2O2/H2O mixtures, H2O and ozone at ECS Meeting held in Atlanta, Georgia October 13-17. The presentation will review common precursor chemistries and discuss collaborative research on oxidants, specifically hydrogen peroxide reactivity.