News
RASIRC announced that it will be presenting “Hydrogen Peroxide Gas: From R&D to HVM” at the 7th Annual CMC Conference. The presentation will discuss the development of two technologies for hydrogen peroxide gas delivery that have crossed the chasm to high volume manufacturing.
“New oxidants are needed to address shrinking device size and continuously increasing three dimensional structures for NAND and DRAM,” said RASIRC Founder and CEO Jeffrey Spiegelman. “These oxidants must overcome line of sight limitations of plasma, temperature limits of water and oxygen, and film damage associated with Ozone.”
A recent study by RASIRC shows that H2O2 doping during hydrogen plasma exposure substantially protected oxide layers while metal or organic layers were processed. This finding supports the use of hydrogen plasma and hydrogen peroxide gas in area selective deposition applications that otherwise risked oxide layer damage. This could reduce step count, cleaning, and process variables. Results of the study will be presented at ASD 2022 in San Francisco.
RASIRC today announced the immediate availability of its new ALD Nitride Wizard™ for rapid precursor candidate selection. Available through the RASIRC website, this free tool models reaction energetics for a wide range of precursors with NH3 and N2H4. For the first time, researchers can quickly screen molecular reactivity without setting up experiments in the lab, which results in a short list of precursors for actual experimentation.
RASIRC research shows that aluminum nitride can be grown thermally at 225°C without detrimental oxygen incorporation. The resulting paper is one of the first published demonstrating this ability, which will be useful for memory and logic devices as well as future semiconductor manufacturing.
China has granted a patent related to the delivery of anhydrous hydrazine gas to process. This patent is part of family of patents around hydrazine, water, and hydrogen peroxide to enable safer and low temperature processing of next generation devices for microelectronic applications.
A novel method for generation of H2O2 gas enables more accurate and repeatable delivery of hydrogen peroxide gas into a wide range of flow rates, operating pressures, and temperatures.
RASIRC today published a survey of semiconductor and related applications that use hydrazine gas. The growing interest in hydrazine is driven by a need for new metals and metal nitride films that meet lower thermal budgets and shrinking 3-dimensional structures. A new formulation of hydrazine meets these requirements.
An IITC paper authored by researchers from UCSD, Samsung, and RASIRC demonstrated record low resistivities for low temperature titanium nitride (TiN) films grown by thermal ALD process. Films yielded resistivities below 200 µohm-cm.
Cheng-Hsuan Kuo and co-workers at UC San Diego in the Kummel research group, has recently concluded a study on TiN ALD utilizing the RASIRC BRUTE® Hydrazine (N2H4) vaporizer technology, which is presented this week at IEEE SISC December 16-18. Read the study here.
The Commissioner of the Intellectual Property Office, Ministry of Economic Affairs, Republic of China has granted patent I703087 for Method and Systems for Purifying Hydrogen Peroxide Solutions. The patent is applicable to all hydrogen peroxide products including BRUTE® Peroxide and The Peroxidizer®.