News
RASIRC is proud to announce that its research partners from the University of California San Diego (UCSD) and the University of Texas at Dallas (UTD) will present their latest technical studies at the upcoming ALD/ALE 2024 conference in Helsinki, Finland.
RASIRC is pleased to announce that the paper titled “In-situ FTIR Study of Oxygen Source Mixing for Hafnium Oxide Atomic Layer Deposition on Titanium Nitride” has been selected as a finalist for the prestigious ALD Student Award.
Bellevue, Washington – July 23rd to 26th, 2023 – Leading experts in the field of atomic layer deposition (ALD) are gathering in Bellevue, Washington for the AVS 23rd International Conference on Atomic Layer Deposition (ALD 2023). Among the cutting-edge research being presented at the conference, is the poster titled “Silicon Nitride ALD Process Using High Purity Hydrazine for Low Temperature Deposition”.
RASIRC announced new UCSD research shows that TiN film grown by low temperature ALD can yield resistivity below 220 uΩ-cm with a non-halogenated precursor on a variety of surfaces. Low resistivity is an indicator of high-quality metal film that works well as a barrier layer or conductor. For high aspect ratio features and horizontal vias, thermal ALD is needed to enable the conformality of the deposition process. Results will be presented at the upcoming International Interconnect Technology Conference (IITC) by the Kummel group.
RASIRC in collaboration with University of California, San Diego (UCSD) will publish data that hydrogen peroxide (H2O2) gas is a better oxidant than water vapor for ALD growth of Hafnium Oxide films. This study is one of four technical presentations exploring RASIRC technology scheduled for the upcoming ALD 2022, the 22nd International Conference on Atomic Layer Deposition, held June 26-29, 2022 in Ghent, Belgium.
RASIRC announced results from a recent study that shows a stable plasma can be made with hydrogen peroxide gas, enabling an extremely dense hydroxyl surface during semiconductor fabrication. The resulting improved wetting angle on HF last silicon was superior to oxygen or water alone. Smaller wetting angle corresponds to increased hydrophilicity and increased hydroxyl density. Having more hydroxyls at the surface improves the interface layer, leading to more organized and cleaner atomic layer films.
RASIRC announced that it will be presenting “Hydrogen Peroxide Gas: From R&D to HVM” at the 7th Annual CMC Conference. The presentation will discuss the development of two technologies for hydrogen peroxide gas delivery that have crossed the chasm to high volume manufacturing.
“New oxidants are needed to address shrinking device size and continuously increasing three dimensional structures for NAND and DRAM,” said RASIRC Founder and CEO Jeffrey Spiegelman. “These oxidants must overcome line of sight limitations of plasma, temperature limits of water and oxygen, and film damage associated with Ozone.”
A recent study by RASIRC shows that H2O2 doping during hydrogen plasma exposure substantially protected oxide layers while metal or organic layers were processed. This finding supports the use of hydrogen plasma and hydrogen peroxide gas in area selective deposition applications that otherwise risked oxide layer damage. This could reduce step count, cleaning, and process variables. Results of the study will be presented at ASD 2022 in San Francisco.
RASIRC today announced the immediate availability of its new ALD Nitride Wizard™ for rapid precursor candidate selection. Available through the RASIRC website, this free tool models reaction energetics for a wide range of precursors with NH3 and N2H4. For the first time, researchers can quickly screen molecular reactivity without setting up experiments in the lab, which results in a short list of precursors for actual experimentation.
RASIRC research shows that aluminum nitride can be grown thermally at 225°C without detrimental oxygen incorporation. The resulting paper is one of the first published demonstrating this ability, which will be useful for memory and logic devices as well as future semiconductor manufacturing.