News
RASIRC®, in collaboration with the Kummel Lab at UC San Diego, has released groundbreaking research on low-temperature thermal TiN deposition using anhydrous BRUTE® Hydrazine. The study demonstrates that BRUTE® Hydrazine enables high-purity, low-resistivity, conformal TiN films—achieving record performance with TEMATi at 425°C, without plasma or halogens. This positions BRUTE® Hydrazine as a scalable, high-performance alternative to NH₃ for advanced semiconductor nodes.
RASIRC, in collaboration with UT Dallas, presents groundbreaking research on engineering metal/high-k oxide interfaces for next-generation DRAM applications. This white paper explores how oxidant selection impacts leakage current, equivalent oxide thickness (EOT), and interface formation, ultimately influencing MIM capacitor performance. The results of this study highlight that H₂O₂-based oxidants show promising potential in minimizing interfacial layer formation, enhancing reliability. This research sets a new benchmark in material engineering for microelectronics.
RASIRC is proud to share the recent discoveries to come out of the Nitride Hub. Through the use of BRUTE® Hydrazine, the Nitride hub was able to deposit high purity SiN below 400C utilizing a true thermal ALD Process. This milestone pushes the boundary that previously existed for thermal SiN ALD processes.
RASIRC has been granted a new patent for the removal of ashable hard masks via a hydrogen peroxide plasma etch process, marking a significant advancement in plasma technology. OES data with BRUTE® Peroxide shows H₂O₂ plasma produces 10x more hydroxyl radicals than O₂ and H₂O plasmas, enabling gentler, more selective etching that enhances precision and reduces contamination in semiconductor manufacturing.
RASIRC introduces the Nitride Hub, a dedicated facility for rapid screening of metal nitride precursors in semiconductor manufacturing. This new hub enables secure, side-by-side testing of BRUTE® Hydrazine and other reactants to accelerate material adoption for advanced nodes.
RASIRC has partnered with Taiyo Nippon Sanso Corporation (TNSC) to bring BRUTE Peroxide to the Japanese market. This canister-based hydrogen peroxide source delivers over 100 times the concentration of traditional methods, offering safer handling and lower water content for advanced semiconductor manufacturing. The expansion strengthens RASIRC’s global reach and supports growing demand for high-purity oxidants in semiconductor and emerging applications.
San Diego, Calif – January 8, 2025 – RASIRC announced new sponsored research from UCSD published in Journal of Vacuum Science and Technology A . The article titled: “Si-Doped HZO and ZrO2 For Hysteresis Free High-k Dielectric” showed hafnium zirconium oxide (HZO) and zirconium oxide (ZrO2) films grown with hydrogen peroxide have significantly less carbon impurities.
San Diego, California – December 11th to 14th, 2024 – Leading experts in semiconductor interfaces gathered at the Catamaran Hotel for the 55th IEEE Semiconductor Interface Specialists Conference (SISC). Among the impressive research presented was:
- Reversible Polarity of GaN / Si Surfaces Using Low Energy Ions During ALD
- Co metal ALD on Cu with Cyclic clean for Inverse Hybrid Metal Bonding
- Atomic Layer Annealing BN with Low Carbon Concentration
RASIRC is proud to announce that its research partners from the University of California San Diego (UCSD) and the University of Texas at Dallas (UTD) will present their latest technical studies at the upcoming ALD/ALE 2024 conference in Helsinki, Finland.
RASIRC is pleased to announce that the paper titled “In-situ FTIR Study of Oxygen Source Mixing for Hafnium Oxide Atomic Layer Deposition on Titanium Nitride” has been selected as a finalist for the prestigious ALD Student Award.