News
RASIRC introduces the Nitride Hub, a dedicated facility for rapid screening of metal nitride precursors in semiconductor manufacturing. This new hub enables secure, side-by-side testing of BRUTE® Hydrazine and other reactants to accelerate material adoption for advanced nodes.
RASIRC has partnered with Taiyo Nippon Sanso Corporation (TNSC) to bring BRUTE Peroxide to the Japanese market. This canister-based hydrogen peroxide source delivers over 100 times the concentration of traditional methods, offering safer handling and lower water content for advanced semiconductor manufacturing. The expansion strengthens RASIRC’s global reach and supports growing demand for high-purity oxidants in semiconductor and emerging applications.
San Diego, Calif – January 8, 2025 – RASIRC announced new sponsored research from UCSD published in Journal of Vacuum Science and Technology A . The article titled: “Si-Doped HZO and ZrO2 For Hysteresis Free High-k Dielectric” showed hafnium zirconium oxide (HZO) and zirconium oxide (ZrO2) films grown with hydrogen peroxide have significantly less carbon impurities.
San Diego, California – December 11th to 14th, 2024 – Leading experts in semiconductor interfaces gathered at the Catamaran Hotel for the 55th IEEE Semiconductor Interface Specialists Conference (SISC). Among the impressive research presented was:
- Reversible Polarity of GaN / Si Surfaces Using Low Energy Ions During ALD
- Co metal ALD on Cu with Cyclic clean for Inverse Hybrid Metal Bonding
- Atomic Layer Annealing BN with Low Carbon Concentration
RASIRC is proud to announce that its research partners from the University of California San Diego (UCSD) and the University of Texas at Dallas (UTD) will present their latest technical studies at the upcoming ALD/ALE 2024 conference in Helsinki, Finland.
RASIRC is pleased to announce that the paper titled “In-situ FTIR Study of Oxygen Source Mixing for Hafnium Oxide Atomic Layer Deposition on Titanium Nitride” has been selected as a finalist for the prestigious ALD Student Award.
Bellevue, Washington – July 23rd to 26th, 2023 – Leading experts in the field of atomic layer deposition (ALD) are gathering in Bellevue, Washington for the AVS 23rd International Conference on Atomic Layer Deposition (ALD 2023). Among the cutting-edge research being presented at the conference, is the poster titled “Silicon Nitride ALD Process Using High Purity Hydrazine for Low Temperature Deposition”.
RASIRC announced new UCSD research shows that TiN film grown by low temperature ALD can yield resistivity below 220 uΩ-cm with a non-halogenated precursor on a variety of surfaces. Low resistivity is an indicator of high-quality metal film that works well as a barrier layer or conductor. For high aspect ratio features and horizontal vias, thermal ALD is needed to enable the conformality of the deposition process. Results will be presented at the upcoming International Interconnect Technology Conference (IITC) by the Kummel group.
RASIRC in collaboration with University of California, San Diego (UCSD) will publish data that hydrogen peroxide (H2O2) gas is a better oxidant than water vapor for ALD growth of Hafnium Oxide films. This study is one of four technical presentations exploring RASIRC technology scheduled for the upcoming ALD 2022, the 22nd International Conference on Atomic Layer Deposition, held June 26-29, 2022 in Ghent, Belgium.
RASIRC announced results from a recent study that shows a stable plasma can be made with hydrogen peroxide gas, enabling an extremely dense hydroxyl surface during semiconductor fabrication. The resulting improved wetting angle on HF last silicon was superior to oxygen or water alone. Smaller wetting angle corresponds to increased hydrophilicity and increased hydroxyl density. Having more hydroxyls at the surface improves the interface layer, leading to more organized and cleaner atomic layer films.