RASIRC announced new UCSD research shows that TiN film grown by low temperature ALD can yield resistivity below 220 uΩ-cm with a non-halogenated precursor on a variety of surfaces. Low resistivity is an indicator of high-quality metal film that works well as a barrier layer or conductor. For high aspect ratio features and horizontal vias, thermal ALD is needed to enable the conformality of the deposition process. Results will be presented at the upcoming International Interconnect Technology Conference (IITC) by the Kummel group.