RASIRC in collaboration with University of California, San Diego (UCSD) will publish data that hydrogen peroxide (H2O2) gas is a better oxidant than water vapor for ALD growth of Hafnium Oxide films. This study is one of four technical presentations exploring RASIRC technology scheduled for the upcoming ALD 2022, the 22nd International Conference on Atomic Layer Deposition, held June 26-29, 2022 in Ghent, Belgium.
Study Shows Improved Yield of Hafnium Oxides Devices with Hydrogen Peroxide Gas
