RASIRC® has released new research on advanced surface functionalization using high-purity hydrogen peroxide (H₂O₂) delivered via BRUTE® Peroxide and Peroxidizer™ technology. The study demonstrates that H₂O₂ enables 4–5x greater OH radical generation compared to H₂O—resulting in superior performance for wafer bonding, area selective deposition (ASD), and protein immobilization. This positions H₂O₂ as a next-generation surface treatment solution for high-precision semiconductor and biofunctional applications.