RASIRC announced results from a recent study that shows a stable plasma can be made with hydrogen peroxide gas, enabling an extremely dense hydroxyl surface during semiconductor fabrication. The resulting improved wetting angle on HF last silicon was superior to oxygen or water alone. Smaller wetting angle corresponds to increased hydrophilicity and increased hydroxyl density. Having more hydroxyls at the surface improves the interface layer, leading to more organized and cleaner atomic layer films.
Hydrogen Peroxide Gas Plasma Enables Extremely Dense Hydroxyl Surface
