RASIRC®, in collaboration with the Kummel Lab at UC San Diego, has released groundbreaking research on low-temperature thermal TiN deposition using anhydrous BRUTE® Hydrazine. The study demonstrates that BRUTE® Hydrazine enables high-purity, low-resistivity, conformal TiN films—achieving record performance with TEMATi at 425°C, without plasma or halogens. This positions BRUTE® Hydrazine as a scalable, high-performance alternative to NH₃ for advanced semiconductor nodes.