RASIRC Presents Low Temperature Silicon Nitride ALD at Annual ALD Conference
RASIRC will present the latest research findings on both hydrogen peroxide gas and hydrazine gas at the annual ALD Conference.
RASIRC will present the latest research findings on both hydrogen peroxide gas and hydrazine gas at the annual ALD Conference.
RASIRC and their collaborative network of leading scientists and customers around the world have in recent years conducted exciting work
RASIRC announced today that the company will present at VCSEL Day 2018, held April 12-13, 2018 in Ulm, Germany.
The presentation will discuss the importance of precursor gas flow measurement independent of carrier gas flow and will provide experimental
We are very happy to announce that have received a late news abstract from RASIRC out of San Diego, USA,
Unique Hydrazine formulation and package enables HAR and 3D film studies for Laboratories. Read the full article here.
Hydrogen peroxide (H2O2) gas is an oxidant that improves passivation and nucleation density at semiconductor interfaces, potentially leading to reduced
Hydrogen Peroxide Gas (HPG) is a powerful and versatile oxidant for processing new materials and 3D structures. HPG is now
Jonas Sundqvist, co-chair of the CMC 2016, while working with Fraunhofer (fraunhofer.de) showed that hydrazine and it’s derivatives provide unique
RASIRC to continue developing products that purify and deliver ultra pure chemistries.