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RASIRC low temperature ALD of silicon and metal nitrides
RASIRC in collaboration with The University of Texas, Dallas has recently developed a low temperature thermal ALD process using the
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RASIRC Presents Low Temperature Silicon Nitride ALD at Annual ALD Conference
RASIRC will present the latest research findings on both hydrogen peroxide gas and hydrazine gas at the annual ALD Conference.
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RASIRC to Present Anhydrous Hydrogen Peroxide Surface Preparation and Enhanced Nucleation for ASD at ASD2018
RASIRC and their collaborative network of leading scientists and customers around the world have in recent years conducted exciting work
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RASIRC Presents Alternative Method for Aperture Oxidation in VCSELs
RASIRC announced today that the company will present at VCSEL Day 2018, held April 12-13, 2018 in Ulm, Germany.
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RASIRC Turns Thermal Mass Flow Measurement of Dilute Reactive Gas Species Inside Out
The presentation will discuss the importance of precursor gas flow measurement independent of carrier gas flow and will provide experimental
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RASIRC to present New ALD chemistries for low temperature oxide and nitride films at ALD4Industry
We are very happy to announce that have received a late news abstract from RASIRC out of San Diego, USA,
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Grow Low Temperature Nitrides by Atomic Layer Deposition Without Plasma
Unique Hydrazine formulation and package enables HAR and 3D film studies for Laboratories. Read the full article here.
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RASIRC BRUTE peroxide and hydrazine technology for leading edge memory and high performance logic
Hydrogen peroxide (H2O2) gas is an oxidant that improves passivation and nucleation density at semiconductor interfaces, potentially leading to reduced