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RASIRC Granted Patent for Controlled Delivery of Hydrogen Peroxide Gas

A novel method for generation of H2O2 gas enables more accurate and repeatable delivery of hydrogen peroxide gas into a […]

RASIRC today published a survey of semiconductor and related applications that use hydrazine gas. The growing interest in hydrazine is

An IITC paper authored by researchers from UCSD, Samsung, and RASIRC demonstrated record low resistivities for low temperature titanium nitride

Cheng-Hsuan Kuo and co-workers at UC San Diego in the Kummel research group, has recently concluded a study on TiN

The Commissioner of the Intellectual Property Office, Ministry of Economic Affairs, Republic of China has granted patent I703087 for Method

The Commissioner of the Intellectual Property Office, Ministry of Economic Affairs, Republic of China has granted patent I683923 for a

RASIRC Chief Technology Officer Dr. Daniel Alvarez, Jr. will present at the upcoming SPIE Advanced Lithography conference Advances in Patterning

RASIRC will showcase a recent study focusing on precursor optimization using a novel hydrogen peroxide mass flow sensor at the

RASIRC will present a metal-oxide dielectric ALD comparative study that examines growth and film characteristics for H2O2/H2O mixtures, H2O and

Inspired by hydrazine’s unique characteristics, University of Texas at Dallas and RASIRC have explored the feasibility of vapor-phase reduction of