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RASIRC Research Partners to Present Cutting-Edge Studies at ALD/ALE 2024 Conference

RASIRC is proud to announce that its research partners from the University of California San Diego (UCSD) and the University […]

RASIRC is pleased to announce that the paper titled “In-situ FTIR Study of Oxygen Source Mixing for Hafnium Oxide Atomic

Bellevue, Washington – July 23rd to 26th, 2023 – Leading experts in the field of atomic layer deposition (ALD) are gathering

RASIRC announced new UCSD research shows that TiN film grown by low temperature ALD can yield resistivity below 220 uΩ-cm

RASIRC in collaboration with University of California, San Diego (UCSD) will publish data that hydrogen peroxide (H2O2) gas is a

RASIRC announced results from a recent study that shows a stable plasma can be made with hydrogen peroxide gas, enabling

RASIRC announced that it will be presenting “Hydrogen Peroxide Gas: From R&D to HVM” at the 7th Annual CMC Conference. The

A recent study by RASIRC shows that H2O2 doping during hydrogen plasma exposure substantially protected oxide layers while metal or organic

RASIRC today announced the immediate availability of its new ALD Nitride Wizard™ for rapid precursor candidate selection. Available through the

RASIRC research shows that aluminum nitride can be grown thermally at 225°C without detrimental oxygen incorporation. The resulting paper is