Uncategorized

RASIRC Nitride Wizard Models Precursor Reactivity with Ammonia and Hydrazine

RASIRC today announced the immediate availability of its new ALD Nitride Wizard™ for rapid precursor candidate selection. Available through the […]

RASIRC research shows that aluminum nitride can be grown thermally at 225°C without detrimental oxygen incorporation. The resulting paper is

China has granted a patent related to the delivery of anhydrous hydrazine gas to process. This patent is part of

A novel method for generation of H2O2 gas enables more accurate and repeatable delivery of hydrogen peroxide gas into a

RASIRC today published a survey of semiconductor and related applications that use hydrazine gas. The growing interest in hydrazine is

An IITC paper authored by researchers from UCSD, Samsung, and RASIRC demonstrated record low resistivities for low temperature titanium nitride

Cheng-Hsuan Kuo and co-workers at UC San Diego in the Kummel research group, has recently concluded a study on TiN

The Commissioner of the Intellectual Property Office, Ministry of Economic Affairs, Republic of China has granted patent I703087 for Method

The Commissioner of the Intellectual Property Office, Ministry of Economic Affairs, Republic of China has granted patent I683923 for a

RASIRC Chief Technology Officer Dr. Daniel Alvarez, Jr. will present at the upcoming SPIE Advanced Lithography conference Advances in Patterning