San Diego, Calif – January 8, 2025 – RASIRC announced new sponsored research from UCSD published in Journal of Vacuum Science and Technology A . The article titled: “Si-Doped HZO and ZrO2 For Hysteresis Free High-k Dielectric” showed hafnium zirconium oxide (HZO) and zirconium oxide (ZrO2) films grown with hydrogen peroxide have significantly less carbon impurities.