Low Resistivity Halogen-Free TiN Films Grown with Hydrazine at Low Temperature
RASIRC announced new UCSD research shows that TiN film grown by low temperature ALD can yield resistivity below 220 uΩ-cm […]
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Study Shows Improved Yield of Hafnium Oxides Devices with Hydrogen Peroxide Gas
RASIRC in collaboration with University of California, San Diego (UCSD) will publish data that hydrogen peroxide (H2O2) gas is a
Hydrogen Peroxide Gas Plasma Enables Extremely Dense Hydroxyl Surface
RASIRC announced results from a recent study that shows a stable plasma can be made with hydrogen peroxide gas, enabling
RASIRC to Present Data of HZO Films Grown with Hydrogen Peroxide Gas
RASIRC announced that it will be presenting “Hydrogen Peroxide Gas: From R&D to HVM” at the 7th Annual CMC Conference. The
RASIRC Study Shows Hydrogen Plasma Damage Minimized by Hydrogen Peroxide Gas
A recent study by RASIRC shows that H2O2 doping during hydrogen plasma exposure substantially protected oxide layers while metal or organic
RASIRC Nitride Wizard Models Precursor Reactivity with Ammonia and Hydrazine
RASIRC today announced the immediate availability of its new ALD Nitride Wizard™ for rapid precursor candidate selection. Available through the
RASIRC Study Shows Nitride Film Growth at 225°C with Hydrazine
RASIRC research shows that aluminum nitride can be grown thermally at 225°C without detrimental oxygen incorporation. The resulting paper is
China Grants Patent to RASIRC for BRUTE® Hydrazine
China has granted a patent related to the delivery of anhydrous hydrazine gas to process. This patent is part of
RASIRC Granted Patent for Controlled Delivery of Hydrogen Peroxide Gas
A novel method for generation of H2O2 gas enables more accurate and repeatable delivery of hydrogen peroxide gas into a
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RASIRC Survey of Hydrazine (N2H4) in Semiconductor Applications Shows Growing Activity in Thin Films at Low Temperature
RASIRC today published a survey of semiconductor and related applications that use hydrazine gas. The growing interest in hydrazine is