RASIRC, in collaboration with UT Dallas, presents groundbreaking research on engineering metal/high-k oxide interfaces for next-generation DRAM applications. This white paper explores how oxidant selection impacts leakage current, equivalent oxide thickness (EOT), and interface formation, ultimately influencing MIM capacitor performance. The results of this study highlight that H₂O₂-based oxidants show promising potential in minimizing interfacial layer formation, enhancing reliability. This research sets a new benchmark in material engineering for microelectronics.